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Updated: Aug 6, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Engineering sensitive gas sensor based on MOF-derived hollow metal-oxide semiconductor heterostructures
1Key Laboratory of Research and Utilization of Ethnomedicinal Plant Resources of Hunan Province, Hunan Engineering Laboratory for Preparation Technology of Polyvinyl Alcohol Fiber Material, Huaihua University, Huaihua, 418000, PR China.
Abstract:
Metal-organic frameworks (MOFs) derived hollow heterostructured metal oxide semiconductors (MOSs) are a class of functional porous materials exhibiting distinctive physiochemical properties. Owing to the unique advantages, including large specific surface, high intrinsic catalytic performance, abundant channels for facilitating electron transfer and mass transport, and strong synergistic effect between different components, MOF-derived hollow MOSs heterostructures can work as promising candidates for gas sensing, which have thus attracted increasing attention. Aiming to provide a deep understanding on the design strategy and MOSs heterostructure, this review presents a comprehensive overview on the advantages and applications of MOF-derived hollow MOSs heterostructures when they used n for the detection of toxic gases. In addition, a deep discussion about the perspective and challenge of this interesting field is also well organized, hoping to provide guidance for the future design and development of more accurate gas sensors.
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