Investigation of the electro-optic effect in high-Q 4H-SiC microresonators

Silicon carbide (SiC) recently emerged as a promising photonic and quantum material owing to its unique material properties. In this work, we carried out an exploratory investigation of the Pockels effect in high-quality-factor (high-Q) 4H-SiC microresonators and demonstrated gigahertz-level electro-optic modulation for the first time. The extracted Pockels coefficients show certain variations among 4H-SiC wafers from different manufacturers, with the magnitudes of r ₁₃ and r ₃₃ estimated to be in the range of (0.3-0.7) pm/V and (0-0.03) pm/V, respectively.