Related Experiment Video
Updated: Apr 28, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
First-principles screening of surface-charge-transfer molecular dopants for n-type diamond
Bangyu Xing1, Dandan Sang2, Xueting Wang2
1State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE, and School of Materials Science and Engineering, Jilin University, Changchun 130012, People's Republic of China.
Abstract:
Surface charge transfer doping (SCTD) is an alternative approach to achieving n-type doped diamonds since the n-type bulk doping of diamonds remains a challenge, but so far efficient diamond n-type SCTD has not been achieved. Here we provide a comprehensive study of the n-type SCTD of the diamond by using first-principles calculations based on the density functional theory. Taking the principle that ionization potentials of the dopants must be higher than those of the diamond, we screened a series of molecules that may be suitable for diamond n-type SCTD doping. Methyl viologen and benzyl viologen provide the largest amount of transfer electron among the common n-type SCTD dopants for the oxygen and fluorine terminated (100) surface diamond, with the electron areal densities of2.60×1013cm-2and9.20×1012cm-2,respectively. It is indicated that the transferred electron amount is positively correlated with the difference between the ionization potentials of the dopants and the electron affinity of the diamond, while the density of dopants also has a positive impact with a decreasing trend. The present work provides a useful understanding of the physical mechanism for the n-type SCTD of diamonds, and benefits the development of n-type SCTD diamond materials.
More Related Videos
13:09Assessment of Boron Doped Diamond Electrode Quality and Application to In Situ Modification of Local pH by Water Electrolysis
Published on: January 6, 2016
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barrier Diode