Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

884
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
884
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

404
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
404
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

290
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
290
Resting Membrane Potential01:24

Resting Membrane Potential

18.9K
The relative difference in electrical charge, or voltage, between the inside and the outside of a cell membrane, is called the membrane potential. It is generated by differences in permeability of the membrane to various ions and the concentrations of these ions across the membrane.
The Inside of a Neuron is More Negative
The membrane potential of a cell can be measured by inserting a microelectrode into a cell and comparing the charge to a reference electrode in the extracellular fluid. The...
18.9K
MOSFET01:16

MOSFET

528
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
528
The Resting Membrane Potential01:21

The Resting Membrane Potential

133.4K
Overview
133.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Coherent transformation of metal halide perovskites.

Nature communications·2026
Same author

Chiral chromophore engineered donor for constructing circularly polarized organic long-persistent luminescence exciplex.

Nature communications·2026
Same author

Gradient-distributed metal-halide dynamic memristors for adaptive and robust voiceprint recognition.

Nature communications·2026
Same author

Bio-Based Smart Packaging Materials for Next-Generation Food Systems.

Materials (Basel, Switzerland)·2026
Same author

Photocatalytic Activation of Alkyl Diazirine Probes for In Situ Drug Profiling and Extracellular Vesicle-Based Diagnostics.

Journal of the American Chemical Society·2026
Same author

Recent Advances of Organic Room Temperature Phosphorescence for Biological Applications.

Advanced materials (Deerfield Beach, Fla.)·2026

Related Experiment Video

Updated: Aug 5, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K

Polymeric Memristor Based Artificial Synapses with Ultra-Wide Operating Temperature.

Jiayu Li1, Yangzhou Qian1, Wen Li1

  • 1State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|March 27, 2023
PubMed
Summary

This study optimized organic polymeric memristors for neuromorphic electronics, achieving robust performance across extreme temperatures (77-573 K). This breakthrough addresses a key challenge for artificial synapse applications in harsh environments.

Keywords:
memristorsneuromorphic computingoperational stabilityorganic semiconductorssolution process

More Related Videos

A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

Related Experiment Videos

Last Updated: Aug 5, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.9K
A Method for Growing Bio-memristors from Slime Mold
07:46

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

9.0K
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.1K

Area of Science:

  • Materials Science
  • Electronics Engineering
  • Neuroscience

Background:

  • Neuromorphic electronics aim to mimic the brain for smart systems.
  • Organic memristors are promising for artificial synapses but struggle with extreme temperatures.
  • Robust device functionality across wide temperature ranges is crucial for practical applications.

Purpose of the Study:

  • To address the challenge of extreme temperature functionality in organic memristors.
  • To tune the performance of solution-based organic polymeric memristors for wide-temperature operation.
  • To verify the working mechanism of these memristors under varying thermal conditions.

Main Methods:

  • Tuning the functionality of solution-based organic polymeric memristors.
  • Testing device performance from cryogenic (77 K) to high temperatures (573 K).
  • Utilizing X-ray photoelectron spectroscopy (XPS) and ToF-SIMS depth profiling to analyze device composition.

Main Results:

  • An optimized organic polymeric memristor demonstrated reliable performance across a wide temperature range (77-573 K).
  • The unencapsulated device exhibited a robust memristive response under extreme thermal conditions.
  • Analysis revealed that reversible ion migration under applied voltage drives the memristor's switching behavior.

Conclusions:

  • The developed organic memristor overcomes extreme temperature limitations for neuromorphic applications.
  • Understanding the ion migration mechanism is key to device stability and performance.
  • This work accelerates the development of resilient memristors for advanced artificial systems.