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Interaction Effects in a 1D Flat Band at a Topological Crystalline Step Edge
Glenn Wagner1, Souvik Das2, Johannes Jung3
1Department of Physics, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland.
Investigating topological crystalline insulators in PbSnSe revealed that step edges, when near the Fermi level, open a correlation gap due to enhanced electronic interactions in one-dimensional channels. This highlights the interplay between topology and many-body effects.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Mechanics
Background:
- Topological crystalline insulators exhibit unique electronic properties.
- Step edges in these materials can host one-dimensional edge channels.
- These edge channels are precursors to higher-order topological phenomena.
Purpose of the Study:
- To investigate the behavior of edge channels in topological crystalline insulators under doping.
- To understand the influence of electronic interactions on these one-dimensional channels.
- To explore the interplay between topology and many-body effects in PbSnSe.
Main Methods:
- Scanning tunneling microscopy (STM) and spectroscopy (STS).
- Doping of lead tin selenide (PbSnSe) topological crystalline insulators.
- Hartree-Fock analysis for theoretical modeling.
Main Results:
- A correlation gap opens when step edge energy aligns with the Fermi level.
- Electronic density collapse into one-dimensional channels enhances interaction effects.
- Experimental observations are consistent with interaction-driven phenomena.
Conclusions:
- Step edges in topological crystalline insulators provide a platform to study topology-interaction interplay.
- Many-body electronic effects significantly influence the properties of these one-dimensional edge channels.
- PbSnSe serves as a model system for exploring these quantum phenomena.
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