Assessing the Surface Modifications of Contaminated Sandblasted and Acid-Etched Implants Through Diode Lasers of...

The present study was conducted to compare the effects of 810 nm, 980 nm, and dual (810: 50%-980: 50%) diode lasers on the surface modifications of implants contaminated by a standard strain of Escherichia coli. Based on the operation on their surface, the implants were divided into six groups: "Group 1" was the positive control group undergoing no specific procedures. "Groups 2, 3, 4, 5, and 6" were contaminated by a standard strain of E. coli; "Group 2" was also set as the negative control group. "Groups 3, 4, and 5" were irradiated by 810 nm, 980 nm, and dual lasers (810: 50%-980: 50%; 1.5W, 320 μm fiber) for 30 sec, respectively. "Group 6" was treated using standard titanium brushes. All groups were examined to evaluate the surface modifications by the X-ray diffraction analysis, scanning electron microscope, and atomic force microscopy. The values of carbon, oxygen, aluminum, titanium, and vanadium were significantly different in the surface composition of the contaminated implants from the control groups (p = 0.010, 0.033, 0.044, 0.016, and 0.037, respectively). In all target areas, there were significant differences in surface roughness (p < 0.0001); the same was also true about the pairwise comparison of the study groups (p < 0.0001). "Group 5" demonstrated lower morphological surface changes and roughness degrees. Overall, laser irradiation could alter the surfaces of the contaminated implants. Titanium brushes and 810/980 nm lasers resulted in similar morphological alterations. Dual lasers enjoyed the least degree of morphological alterations and surface roughness.