Structural, Optical, Electric and Magnetic Characteristics of (In_1-xGd_x)₂O₃ Films for Optoelectronics

After (In_1-xGdx)₂O₃ powder with a wide x range of 0 to 10 at.% was chemically produced, (In_1-xGdx)₂O₃ thin films were evaporated under ultra-vacuum using an electron beam apparatus. We investigated the influence of the Gd doping concentration on the magnetic, optical, electrical, and structural properties of the resultant In₂O₃ deposits. The produced Gd-doped In₂O₃ films have a cubic In₂O₃ structure without a secondary phase, as shown by the X-ray diffraction results. Additionally, the chemical analysis revealed that the films are nearly stoichiometric. A three-layer model reproduced the spectroscopic ellipsometer readings to determine the optical parameters and energy gap. The Egopt changed toward the lower wavelength with growing the Gd doping in (In_1-xGdx)₂O₃ films. The Egopt in the (In_1-xGd_x)₂O₃ films was observed to increase from 3.22 to 3.45 eV when the Gd concentration climbed. Both carrier concentration and hall mobility were found during the Hall effect studies. It was possible to construct the heterojunction of Ni (Al)/n-(In_1-xGd_x)₂O₃/p-Si/Al. At voltages between -2 and 2 volts, investigations into the dark (cutting-edge-voltage) characteristics of the produced heterojunctions were made. The oxygen vacancies and cationic defects in the lattice caused by the uncompensated cationic charges resulted in significant magnetism and ferromagnetic behavior in the undoped In₂O₃ films. The (In_1-xGd_x)₂O₃ films, however, displayed faint ferromagnetism. The ferromagnetism seen in the (In_1-xGd_x)₂O₃ films was caused by oxygen vacancies formed during the vacuum film production process. Metal cations created ferromagnetic exchange interactions by snatching free electrons in oxygen.