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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo

Fazliyana 'Izzati Za'abar1, Ahmad Wafi Mahmood Zuhdi2, Camellia Doroody2

  • 1UNITEN R&D Sdn. Bhd., Universiti Tenaga Nasional (UNITEN), Kajang 43000, Selangor, Malaysia.

Materials (Basel, Switzerland)
|March 29, 2023
PubMed
Summary

Optimizing DC sputtering power for molybdenum (Mo) thin films enhances the formation of a crucial molybdenum selenide (MoSe2) interfacial layer. This control is key for improving the performance and stability of copper indium gallium selenide (CIGSe) solar cells.

Keywords:
CIGSeDC magnetron sputteringdeposition powerenergymolybdenummolybdenum diselenide (MoSe2)solar cells

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Area of Science:

  • Materials Science
  • Thin Film Technology
  • Semiconductor Physics

Background:

  • Molybdenum (Mo) thin films are critical as back contacts in Copper Indium Gallium Selenide (CIGSe) solar cells.
  • The formation of an interfacial layer, specifically Molybdenum Selenide (MoSe2), between CIGSe and Mo can significantly impact device performance.
  • Understanding and controlling MoSe2 formation is essential for optimizing CIGSe solar cell efficiency.

Purpose of the Study:

  • To investigate the effect of DC sputtering power on Mo thin film properties.
  • To analyze the influence of Mo deposition power on the formation and characteristics of the MoSe2 interfacial layer during Se-free annealing.
  • To correlate Mo film and MoSe2 layer properties with the overall performance of CIGSe solar devices.

Main Methods:

  • Deposition of Mo thin films on glass substrates using DC magnetron sputtering at varying power levels (80 W and 140 W).
  • Characterization of Mo films including electrical resistivity, morphology, structure, and adhesion.
  • Analysis of MoSe2 formation using structural and Raman spectroscopy.
  • Evaluation of the CIGSe/Mo hetero-contact using dark current-voltage (I-V) measurements at room temperature.
  • Fabrication and resistance analysis of Ni/CIGSe/Mo solar cell structures.

Main Results:

  • Increased DC sputtering power (140 W vs. 80 W) resulted in thicker Mo films with larger grains but significantly improved conductivity and lower sheet resistance (0.353 Ω/square).
  • Higher deposition power promoted the formation of MoSe2 with a preferential (103) orientation, facilitated by a more porous Mo surface and larger contact area with the CIGSe film.
  • The CIGSe/Mo hetero-contact, including the MoSe2 layer, exhibited favorable ohmic behavior, not Schottky-type.
  • Device resistance was found to be directly linked to the MoSe2 layer thickness, with intact adhesion between CIGSe and Mo.

Conclusions:

  • Controlling Mo thin film deposition power is a viable method to regulate the thickness and structural properties of the unintentional MoSe2 interfacial layer.
  • Optimized Mo deposition conditions lead to improved Mo film conductivity and favorable MoSe2 growth, crucial for ohmic contact formation.
  • The study highlights the importance of the MoSe2 interfacial layer's structural properties for enhancing CIGSe solar cell performance and stability.