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Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage

Haihong Qin1, Zhenhua Ba1, Sixuan Xie1

  • 1Department of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China.

Micromachines
|March 29, 2023
PubMed

Keywords:
SiC MOSFETdriving circuitgate-source voltageparameters optimization

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