Enhancing Electrochemical Performance with g-C₃N₄/CeO₂ Binary Electrode Material

An innovative form of 2D/0D g-C₃N₄/CeO₂ nanostructure was synthesized using a simple precursor decomposition process. The 2D g-C₃N₄ directs the growth of 0D CeO₂ quantum dots, while also promoting good dispersion of CeO₂QDs. This 2D/0D nanostructure shows a capacitance of 202.5 F/g and notable rate capability and stability, outperforming the g-C₃N₄ electrode, reflecting the state-of-the-art g-C₃N₄ binary electrodes. The binary combination of materials also enables an asymmetric device (g-C₃N₄/CeO₂QDs//AC) to deliver the highest energy density (9.25 Wh/kg) and power density (900 W/kg). The superior rate capacity and stability endorsed the quantum structural merits of CeO₂QDs and layered g-C₃N₄, which offer more accessible sites for ion transport. These results suggest that the g-C₃N₄/CeO₂QDs nanostructure is a promising electrode material for energy storage devices.