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Updated: Aug 5, 2025

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots
Xiaohui Li1, Qian Xu1, Ziyang Zhang2
1School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, China.
Nanomaterials (Basel, Switzerland)
|March 29, 2023
Abstract:
Molecular beam epitaxy technology has a significant advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots [...].

