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Updated: Aug 5, 2025

Negative Additive Manufacturing of Complex Shaped Boron Carbides
Published on: September 18, 2018
The Temperature Dependence of the Hexagonal Boron Nitride Oxidation Resistance, Insights from First-Principle
Liubov Yu Antipina1, Liubov A Varlamova1, Pavel B Sorokin1
1Laboratory of Digital Material Science, National University of Science and Technology "MISIS", 4 bld.1 Leninsky Av., Moscow 119049, Russia.
Abstract:
In this work, we studied the oxidation stability of h-BN by investigating different variants of its modification by -OH, -O- and -O-O- groups using an atomistic thermodynamics approach. We showed that up to temperatures of ~1700 K, oxygen is deposited on the surface of hexagonal boron nitride without dissociation, in the form of peroxide. Only at higher temperatures, oxygen tends to be incorporated into the lattice of hexagonal boron nitride, except in the presence of defects Nv, when the embedding occurs at all temperatures. Finally, the electronic and magnetic properties of the oxidized h-BN were studied.
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