A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor...

Area of Science:

• Semiconductor device physics
• Biosensor technology
• Nanotechnology

Background:

• Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are crucial for biosensing.
• Dielectric modulation (DM) enhances sensitivity in MOSFET-based biosensors.
• Junctionless (JL) and double-gate (DG) architectures offer improved electrostatic control.

Purpose of the Study:

• To evaluate and compare the performance of n-type JL-DM-DG-MOSFET and n-type JL-DM-GSDG-MOSFET biosensors.
• To assess the sensitivity improvements for detecting neutral and charged biomolecules.
• To analyze noise and analog/RF parameters for both biosensor designs.

Main Methods:

• Utilizing the dielectric modulation (DM) method for biomolecule detection in a cavity.
• Simulating device performance using the ATLAS device simulator.
• Comparing key performance metrics including threshold voltage, Ion/Ioff ratio, and sensitivity (ΔVth).

Main Results:

• The JL-DM-GSDG-MOSFET biosensor exhibited significantly higher sensitivity improvements (116.66% for neutral, 1165.78% for charged biomolecules) compared to JL-DM-DG-MOSFET (66.66% for neutral, 978.94% for charged).
• The GSDG-MOSFET biosensor demonstrated a lower threshold voltage and higher sensitivity.
• DG-MOSFET-based biosensors showed a higher Ion/Ioff ratio.

Conclusions:

• The proposed GSDG-MOSFET-based biosensor offers superior sensitivity over the DG-MOSFET design.
• GSDG-MOSFET biosensors are well-suited for applications demanding low power consumption, high speed, and high sensitivity.
• The study validates the electrical detection of biomolecules and provides a comparative analysis of device performance.