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B-/Si-containing electrolyte additive efficiently establish a stable interface for high-voltage LiCoO2 cathode and
Xiaoyan Lin1, Fanghong Zeng1, Jialuo Lin1
1School of Chemistry, South China Normal University, Guangzhou 510006, Guangdong, China; National and Local Joint Engineering Research Center of MPTES in High Energy and Safety LIBs, Engineering Research Center of MTEES (Ministry of Education), and Key Lab. of ETESPG (GHEI), South China Normal University, Guangzhou 510006, Guangdong, China.
Abstract:
An effective electrolyte additive, 3-(tert-Butyldimethylsilyoxy) phenylboronic acid (TBPB), is proposed to significantly improve the cycle stability of high voltage LiCoO2 (LCO) cathode. Experimental and computational results show that TBPB has a relatively higher oxidation activity than base electrolyte, and preferentially constructs a stable cathode electrolyte interphase (CEI) containing B-/Si- components on LCO surface. Theoretical calculation, XPS and NMR data show that TBPB-derived CEI layer contains B-F species and has the function of eliminating HF. The as-formed CEI effectively inhibits the detrimental side reactions from electrolyte decomposition and LCO surface structure reconstruction. The capacity retention of LCO/Li half-cell increases from 38.92% (base electrolyte) to 83.70% after 150 cycles at 1 C between 3.0 V and 4.5 V by adding 1% TBPB. Moreover, TBPB is also reduced prior to base electrolyte, forming an ionic conducting solid electrolyte interphase (SEI) on graphite surface. Benefiting from the synergistic effect between CEI layer on LCO cathode and SEI layer on graphite anode to effectively decrease the electrolyte decomposition, the capacity retention of commercial LCO/graphite pouch cell with 1% TBPB increases from 10.44% to 76.13% after 400 cycles at 1 C between 3.0 V and 4.5 V. This work demonstrates that TBPB can act as an effective film-forming additive for high energy density LCO cathode at high voltage, and provides novel insights for its commercial application from the aspect of synergistically interfacial stability.
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