Broadband Full-Spectrum Raman Excitation Mapping Reveals Intricate Optoelectronic-Vibrational Resonance Structure of...

The Raman excitation spectra of chirality-pure (6,5), (7,5), and (8,3) single-walled carbon nanotubes (SWCNTs) are explored for homogeneous solid film samples over broad excitation energy and scattering energy ranges using a rapid and relatively simple full spectrum Raman excitation mapping technique. Identification of variation in scattering intensity with sample type and phonon energy related to different vibrational bands is clearly realized. Excitation profiles are found to vary strongly for different phonon modes. Some modes' Raman excitation profiles are extracted, with the G band profile compared to earlier work. Other modes, such as the M and iTOLA modes, have quite sharp resonance profiles and strong resonances. Conventional fixed wavelength Raman spectroscopy can miss these effects on the scattering intensities entirely due to the significant intensity changes observed for small variations in excitation wavelength. Peak intensities for phonon modes traceable to a pristine carbon lattice forming a SWCNT sidewall were greater for high-crystallinity materials. In the case of highly defective SWCNTs, the scattering intensities of the G band and the defect-related D band are demonstrated to be affected both in absolute intensities and in relative ratio, with the ratio that would be measured by single wavelength Raman scattering dependent on the excitation wavelength due to differences in the resonance energy profiles of the two bands. Lastly it is shown that the approach of this contribution yields a clear path toward increasing the rigor and quantification of resonance Raman scattering intensity measurements through tractable corrections of excitation and emission side variations in efficiency with excitation wavelength.