Related Experiment Video
Updated: Aug 4, 2025

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
Published on: October 12, 2019
Descriptor engineering in machine learning regression of electronic structure properties for 2D materials
Minh Tuan Dau1, Mohamed Al Khalfioui2, Adrien Michon2
1Université Côte d'Azur, CNRS, CRHEA, rue Bernard Grégory, 06560, Valbonne, France. mtd@crhea.cnrs.fr.
Abstract:
We build new material descriptors to predict the band gap and the work function of 2D materials by tree-based machine-learning models. The descriptor's construction is based on vectorizing property matrices and on empirical property function, leading to mixing features that require low-resource computations. Combined with database-based features, the mixing features significantly improve the training and prediction of the models. We find R[Formula: see text] greater than 0.9 and mean absolute errors (MAE) smaller than 0.23 eV both for the training and prediction. The highest R[Formula: see text] of 0.95, 0.98 and the smallest MAE of 0.16 eV and 0.10 eV were obtained by using extreme gradient boosting for the bandgap and work-function predictions, respectively. These metrics were greatly improved as compared to those of database features-based predictions. We also find that the hybrid features slightly reduce the overfitting despite a small scale of the dataset. The relevance of the descriptor-based method was assessed by predicting and comparing the electronic properties of several 2D materials belonging to new classes (oxides, nitrides, carbides) with those of conventional computations. Our work provides a guideline to efficiently engineer descriptors by using vectorized property matrices and hybrid features for predicting 2D materials properties via ensemble models.
More Related Videos
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
07:24Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Related Concept Videos
Electronic Structure of Atoms
An atom comprises protons and neutrons, which are contained inside the dense, central core called the nucleus, with electrons present around the nucleus. Taking into account the wave–particle duality of electrons and the uncertainty in position around the nucleus, quantum mechanics provides a more accurate model for the atomic structure. It describes atomic orbitals as the regions around the nucleus where electrons of discrete energy exist, characterized by four quantum...
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
Crystal Field Theory - Octahedral Complexes
To explain the observed behavior of transition metal complexes (such as colors), a model involving electrostatic interactions between the electrons from the ligands and the electrons in the unhybridized d orbitals of the central metal atom has been developed. This electrostatic model is crystal field theory (CFT). It helps to understand, interpret, and predict the colors, magnetic behavior, and some structures of coordination compounds of transition metals.
CFT focuses on...
Mechanistic Models: Compartment Models in Individual and Population Analysis
Mechanistic Models: Compartment Models in Algorithms for Numerical Problem Solving
In individual population analyses, different algorithms are employed, such as Cauchy's method, which uses a...
Predicting Molecular Geometry