A high responsivity, high detectivity, and high response speed MSM UVB photodetector based on SnO2 microwires
Rongpeng Fu1, Xue Jiang1, Yuefei Wang1
1Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun 130024, P. R. China. libs@nenu.edu.cn.
Abstract:
We report a high performance UVB photodetector with a metal-semiconductor-metal device structure based on high crystal quality SnO2 microwires prepared by chemical vapor deposition. Under 10 V bias, a low dark current of 3.69 × 10-9 A and a high light-to-dark current ratio of 1630 were achieved. The device showed a high responsivity of about 1353.0 A·W-1 under 322 nm light illumination. The detectivity of the device is as high as 5.4 × 1014 Jones, which ensures the detection of weak signals in the UVB spectral region. Due to the small amount of deep-level defect-induced carrier recombination, the light response rise time and fall time are shorter than 0.08 s.
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