Atomistic nonlinear carrier dynamics in Ge

An atomistic technique to successfully demonstrate the ultrafast carrier dynamics in Ge photoconductive samples is reported here. The technique is validated against the experimental findings and with the Drude conductivities. The impact of the various different scattering mechanisms is used to calibrate the experimental results. It is observed that the total scattering rate is not a constant parameter as contrast to Drude model which uses constant scattering rate as the fitting parameter to demonstrate the ultrafast carrier dynamics, but strongly dependent on the applied peak THz field strength. It also contradicts with the relaxation time approximation (RTA) method which uses scattering rate chosen on the empirical basis as the fitting parameter to demonstrate the ultrafast carrier dynamics. On the other hand the limitations and challenges offered by various types of density functional theories (DFT) pose lot of challenges. In current manuscript various types of scattering mechanisms i.e. acoustic, intervalley, Coulomb and impact ionization on the behavior of carrier conductivity are studied in details. The proposed technique has shown capability to extract low and high frequency conductivities accurately which is impossible through the Drude model or DFT based theories. It is observed that the free carrier absorption coefficient depends on the refractive index of the material at low THz frequencies. The solution of Boltzmann transport equation through Monte Carlo technique provides valuable insights for better understanding of ultrafast carrier transportation mechanism. The free carrier absorption spectra are found to be in good agreement with the experimental results at various THz field strengths.