Spontaneous Internal Encapsulation via Dual Interfacial Perovskite Heterojunction Enables Highly Efficient and Stable...

Deep traps stemming from the defects formed at the surfaces and grain boundaries of the perovskite films are the main reasons of nonradiative recombination and material degradation, which significantly affect efficiency and stability of perovskite solar cells (PSCs). Here, a spontaneous internal encapsulation strategy was developed by constructing a dual interfacial perovskite heterojunction at the top and buried interface of the three-dimensional (3D) perovskite film. The spacer cations of the two-dimensional (2D) perovskite structure interacted strongly with the 3D perovskite to passivate the defects and optimize the energy level alignment. Meanwhile, the interfacial perovskite heterojunction underearth delayed the crystallization speed and improved the crystallization quality of the upper 3D perovskite. Thanks to these positive effects, the PSC exhibited a power conversion efficiency of 22.92% with good reproducibility. Significantly, the unencapsulated device with the dual interfacial perovskite heterojunction maintained 88% of its initial efficiency after 2900 h under 65 ± 5% RH in air.