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Plasma Nitridation Effect on β-Ga2O3 Semiconductors.
Sunjae Kim1,2, Minje Kim1,2, Jihyun Kim3
1Department of Materials Science and Engineering, Korea Aerospace University, Goyang 10540, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|April 13, 2023
Summary
Plasma nitridation (PN) effectively reduces electron trap sites in beta-gallium oxide (β-Ga2O3) thin films. This defect reduction enhances the electrical and optoelectronic performance of β-Ga2O3 devices.
Area of Science:
- Materials Science
- Semiconductor Physics
Background:
- Semiconductor device performance is significantly impacted by crystal defects.
- Oxygen vacancies are common electron trap sites in metal oxide semiconductors like beta-gallium oxide (β-Ga2O3).
Purpose of the Study:
- To investigate the impact of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films.
- To analyze how varying PN treatment times affect the electrical and optical properties of these films.
Main Methods:
- Polycrystalline β-Ga2O3 thin films were subjected to plasma nitridation (PN).
- Electrical and optical properties were measured and compared across different PN treatment durations.
Main Results:
- Plasma nitridation effectively reduced the density of electron trap sites in β-Ga2O3 thin films.
- A correlation was observed between PN treatment time and the degree of defect reduction.
Conclusions:
- Plasma nitridation is a viable method for mitigating electron trap sites in β-Ga2O3.
- This technique holds potential for improving the performance of electronic and optoelectronic devices based on β-Ga2O3.
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