Tellurium Doping Inducing Defect Passivation for Highly Effective Antimony Selenide Thin Film Solar Cell

Antimony selenide (Sb₂Se₃) is emerging as a promising photovoltaic material owing to its excellent photoelectric property. However, the low carrier transport efficiency, and detrimental surface oxidation of the Sb₂Se₃ thin film greatly influenced the further improvement of the device efficiency. In this study, the introduction of tellurium (Te) can induce the benign growth orientation and the desirable Sb/Se atomic ratio in the Te-Sb₂Se₃ thin film. Under various characterizations, it found that the Te-doping tended to form Sb₂Te₃-doped Sb₂Se₃, instead of alloy-type Sb₂(Se,Te)₃. After Te doping, the mitigation of surface oxidation has been confirmed by the Raman spectra. High-quality Te-Sb₂Se₃ thin films with preferred [hk1] orientation, large grain size, and low defect density can be successfully prepared. Consequently, a 7.61% efficiency Sb₂Se₃ solar cell has been achieved with a V_OC of 474 mV, a J_SC of 25.88 mA/cm², and an FF of 64.09%. This work can provide an effective strategy for optimizing the physical properties of the Sb₂Se₃ absorber, and therefore the further efficiency improvement of the Sb₂Se₃ solar cells.