Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of FET01:22

Biasing of FET

333
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
333
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

408
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
408
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

423
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
423
Field Effect Transistor01:29

Field Effect Transistor

494
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
494
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

834
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
834
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

290
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
290

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Degree of hypertension and subclinical coronary atherosclerosis in asymptomatic individuals without cardiovascular disease.

PloS one·2026
Same author

Sex differences in the association of lipoprotein(a) with subclinical coronary atherosclerosis in asymptomatic individuals.

Journal of cardiology·2026
Same author

Association of Toothbrushing, Dental Flossing, and Interdental Brushing with Stroke Risk.

Journal of dentistry·2026
Same author

Monolithic 3D-Integrated All-Solid Ion-Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi-Timescale Reservoir Computing.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Cardiorenal Outcomes of Empagliflozin Versus Dapagliflozin in Secondary Prevention Among Patients With Type 2 Diabetes and Atherosclerotic Cardiovascular Disease: A Nationwide Cohort Study.

Diabetes, obesity & metabolism·2026
Same author

Acute Thermal Tolerance and Physiological Responses in Commercial and Native Red-Feathered Roosters Sharing the Same HSP70 Homozygous Genotype.

Animals : an open access journal from MDPI·2026

Related Experiment Video

Updated: Aug 2, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.3K

Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic Operations.

Hoyeon Cho1, Donghyun Lee1, Kyungmin Ko1

  • 1Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.

ACS Nano
|April 13, 2023
PubMed
Summary

We developed novel double-floating-gate synaptic transistors using van der Waals materials. These devices show enhanced memory performance for efficient neuro-inspired computing.

Keywords:
2D materialsfloating gate memoryneuromorphic computingsynaptic devicevdW heterostructure

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.8K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Related Experiment Videos

Last Updated: Aug 2, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.3K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.8K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

Area of Science:

  • Materials Science
  • Nanoelectronics
  • Neuromorphic Computing

Background:

  • Two-dimensional materials offer unique properties for nanoelectronics.
  • Existing devices require further development for optimal neuro-inspired computing.
  • Synaptic transistors are key components for mimicking brain functions.

Purpose of the Study:

  • To present van der Waals (vdW) integrated synaptic transistors with multistacked floating gates.
  • To investigate the performance of a double-floating-gate (DFG) device compared to single-floating-gate structures.
  • To demonstrate the potential of these devices for neuromorphic computing applications.

Main Methods:

  • Fabrication of vdW integrated synaptic transistors with double floating gates.
  • Characterization of nonvolatile memory performance (memory window, on-off ratio, retention, endurance).
  • Evaluation of synaptic behavior (long-term potentiation/depression) and classification accuracy on MNIST and Fashion-MNIST datasets.

Main Results:

  • The DFG device demonstrated superior nonvolatile memory performance: large memory window (>100 V), high on-off ratio (∼10^7), long retention (>5000 s), and good endurance (>500 cycles).
  • Enhanced charge-storage capacity and spatial redistribution in DFG devices led to effective modulation of trapped charge density.
  • Improved weight update profiles resulted in high classification accuracies (96.12% on MNIST, 81.68% on Fashion-MNIST).

Conclusions:

  • The developed DFG synaptic transistors offer significant improvements in memory performance.
  • These vdW-bonded devices are a powerful option for highly efficient neuromorphic computing.
  • The findings pave the way for advanced brain-inspired computing hardware.