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Roadmap of spin-orbit torques.

Qiming Shao1, Peng Li2, Luqiao Liu3

  • 1Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology.

IEEE Transactions on Magnetics
|April 14, 2023
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Summary
This summary is machine-generated.

Spin-orbit torque (SOT) drives efficient spintronic device manipulation. This review covers SOT theories, materials like topological insulators, and applications including MRAM and neuromorphic devices, guiding future research and industry development.

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Area of Science:

  • Spintronics
  • Condensed Matter Physics
  • Materials Science

Background:

  • Spin-orbit torque (SOT) is a key technology for manipulating spintronic devices.
  • Early SOT research focused on electric fields, spin-orbit coupling, and electron spins.
  • Recent advancements incorporate phonons, magnons, and heat for enhanced SOT efficiency.

Purpose of the Study:

  • To provide a comprehensive review of spin-orbit torque (SOT) theory, materials, and applications.
  • To guide future development in academic and industrial sectors.
  • To explore emerging SOT mechanisms and material classes.

Main Methods:

  • Review of theoretical mechanisms generating SOT (spin Hall effect, Rashba-Edelstein effect, orbital Hall effect, thermal gradients, magnons, strain effects).
  • Discussion of materials enabling SOT (metals, alloys, topological insulators, 2D materials, complex oxides).
  • Analysis of magnetic layer roles (insulators, antiferromagnets, ferrimagnets) and device applications.

Main Results:

  • Exploration of diverse SOT generation mechanisms and a wide range of enabling materials.
  • Detailed discussion on the impact of different magnetic layer types on SOT device performance.
  • Comparison of SOT-MRAM architectures and other SOT-based applications like terahertz generators and racetrack memories.

Conclusions:

  • SOT technology is rapidly advancing with significant potential for various applications.
  • Holistic material design, including magnetic layers, is crucial for maximizing SOT device performance.
  • Future research should focus on novel SOT applications in neuromorphic computing and advanced memory technologies.