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Published on: May 10, 2021
Strain-mediated ion-ion interaction in rare-earth-doped solids
A Louchet-Chauvet1, T Chanelière2
1ESPCI Paris, Université PSL, CNRS, Institut Langevin, Paris 75005, France.
Optical excitation of rare-earth ions causes a piezo-orbital effect, leading to a strain-mediated ion-ion interaction. This interaction, scaling as 1/r3, is comparable to dipole-dipole forces.
Area of Science:
- Condensed matter physics
- Materials science
- Quantum optics
Background:
- Optical excitation of rare-earth ions induces local host matrix shape changes.
- This phenomenon is linked to alterations in the rare-earth ion's electronic orbital geometry.
- The resulting effect is termed piezo-orbital backaction.
Purpose of the Study:
- To investigate the consequences of piezo-orbital backaction in rare-earth doped materials.
- To develop a macroscopic model for understanding ion-ion interactions mediated by mechanical strain.
- To compare this novel interaction with established electric and magnetic dipole-dipole interactions.
Main Methods:
- Development of a macroscopic model to describe piezo-orbital backaction.
- Quantitative assessment of the strain-mediated ion-ion interaction.
- Comparison of interaction magnitudes using instantaneous spectral diffusion mechanisms.
- Re-examination of existing scientific literature on rare-earth doped systems.
Main Results:
- A previously disregarded ion-ion interaction, mediated by mechanical strain, has been identified.
- This strain-mediated interaction exhibits a 1/r3 scaling, similar to electric and magnetic dipole-dipole interactions.
- The magnitude of this interaction is quantitatively assessed and compared to other archetypal interactions.
Conclusions:
- The piezo-orbital backaction introduces a significant ion-ion interaction mechanism in rare-earth doped materials.
- This interaction contributes to spectral diffusion and influences material properties.
- The findings necessitate a re-evaluation of the role of strain-mediated interactions in various rare-earth systems.
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