Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Circular Dichroism via Extrinsic Chirality in Achiral Plasmonic Nanohole Arrays.

Materials (Basel, Switzerland)·2026
Same author

Demonstration of Mode-Locked Frequency Comb for an X-Ray Free-Electron Laser.

Physical review letters·2026
Same author

k-dependent modulation of intrinsic spin-orbit interaction in MoSe<sub>2</sub> induced by proximity to amorphous Pb.

Nature communications·2025
Same author

Nondestructive X-ray tomography of brain tissue ultrastructure.

Nature methods·2025
Same author

Imaging of electrically controlled van der Waals layer stacking in 1T-TaS<sub>2</sub>.

Nature communications·2025
Same author

Future of condensed matter physics for the next 10 years<sup></sup>.

Journal of physics. Condensed matter : an Institute of Physics journal·2025

Related Experiment Video

Updated: Aug 2, 2025

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

14.8K

Resistless EUV lithography: Photon-induced oxide patterning on silicon.

Li-Ting Tseng1, Prajith Karadan1, Dimitrios Kazazis1

  • 1Paul Scherrer Institute, 5232 Villigen PSI, Switzerland.

Science Advances
|April 19, 2023
PubMed
Summary

This study demonstrates resistless extreme ultraviolet (EUV) patterning on silicon surfaces. EUV photons induce surface reactions, creating an oxide layer for high-resolution nanometer-scale lithography without photoresists.

More Related Videos

Patterning via Optical Saturable Transitions - Fabrication and Characterization
08:19

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Published on: December 11, 2014

6.9K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.8K

Related Experiment Videos

Last Updated: Aug 2, 2025

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

14.8K
Patterning via Optical Saturable Transitions - Fabrication and Characterization
08:19

Patterning via Optical Saturable Transitions - Fabrication and Characterization

Published on: December 11, 2014

6.9K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.8K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Manufacturing

Background:

  • Extreme ultraviolet (EUV) lithography is crucial for semiconductor manufacturing, offering high resolution and throughput.
  • Photoresists, essential in current lithography, face inherent limitations impacting future resolution advancements.
  • Developing alternative patterning methods is vital to overcome resist-related challenges.

Purpose of the Study:

  • To demonstrate the feasibility of resistless patterning using EUV lithography on a silicon surface.
  • To explore EUV-induced surface reactions as a mechanism for direct patterning.
  • To overcome the limitations associated with traditional photoresist materials in nanometer-scale fabrication.

Main Methods:

  • Utilizing extreme ultraviolet (EUV) radiation on a hydrogen-terminated silicon (100) surface.
  • Inducing surface reactions via EUV photons to form an oxide layer acting as an etch mask.
  • Characterizing the resulting silicon dioxide/silicon gratings using high-resolution metrology.

Main Results:

  • Achieved successful patterning on an HF-treated silicon surface without the need for a photoresist.
  • Demonstrated EUV photons inducing surface reactions and assisting oxide layer growth for etch masking.
  • Fabricated silicon dioxide/silicon gratings with a 75-nanometer half-pitch and 31-nanometer height.

Conclusions:

  • Resistless EUV lithography is a feasible method for nanometer-scale patterning.
  • This approach bypasses the resolution and roughness limitations inherent in photoresist materials.
  • Further development of resistless EUV lithography offers a promising path for advanced semiconductor manufacturing.