Novel design constructed In₂S₃@SnO₂ hollow heterojunctions by insufficiently etched MOFs as framework for...

Compared to sufficiently etched MOFs materials, insufficiently etched MOFs materials tend to display unsatisfactory performance due to their immature structure and have been eliminated from scientific research. Herein, this work reported a novel In₂S₃@SnO₂ heterojunction (In₂S₃@SnO₂-HSHT) materials, which were stably synthesized in high temperature aqueous environment and equipped extraordinary photoelectrochemical (PEC) properties, fabricated by a succinct hydrothermal synthesis method using insufficiently etched MIL-68 as a self-sacrificing template. Compared with the control groups and In₂S₃@SnO₂ heterojunctions with collapse morphology synthesized by sufficiently etched MIL-68 in high temperature aqueous environment, In₂S₃@SnO₂-HSHT synthesized from insufficiently etched MIL-68 as a template had a massively enhanced light-harvesting capability and generated more photoinduced charge carriers due to its well-preserved hollow structure. Therefore, based on outstanding PEC performance of In₂S₃@SnO₂-HSHT, the established PEC label-free signal-off immunosensor to detect CYFRA 21-1, revealing vivid selectivity, stability, and reproducibility. This novel strategy adopted the insufficient chemical etching method neglected by the mainstream chemical etching approaches, which solved the challenge that the stability of the sufficient etched MOFs with hollow structure cannot be maintained under the subsequent high temperature aqueous reaction conditions, and was further applied to the design of hollow heterojunction materials for photoelectrochemical fields.