Related Experiment Video
Updated: Aug 1, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Direct formation of interlayer excitons in MoSSe/WSSe van der Waals heterobilayer
Fengping Li1, Yuanyuan Wang1, Yan Liang1
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
Abstract:
In respect to the van der Waals structures composed of two-dimensional transition metal dichalcogenides, the interlayer excitonic physics plays a determinative role in the exciting new phenomena and applications in such as photonics, optoelectronics and valleytronics. In this work, beyond the well-accepted, conventional indirect two-step process, we proved that the large interlayer polarization can cause the direct formation of interlayer excitons in MoSSe/WSSe. In MoSSe/WSSe, the interlayer exciton with a sizable oscillator strength is located at 1.49 eV, well below the characteristic intralayer excitons, with a significantly reduced exciton binding energy of 0.28 eV and an improved exciton lifetime of 2.25 ns.
More Related Videos
Related Concept Videos
Hybridization of Atomic Orbitals I
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Molecular Orbital Theory II
Van der Waals Interactions
MO Theory and Covalent Bonding
Hybridization of Atomic Orbitals II

