Related Experiment Video
Updated: Aug 1, 2025
07:00
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
7.2K
Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires
Mohammad Fazel Vafadar1, Songrui Zhao2
1Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC, H3A 0E9, Canada.
Scientific Reports
|April 24, 2023
Summary
Researchers developed novel GaN-based nanowire photonic crystals for surface-emitting (SE) lasers. This breakthrough achieves ultralow threshold ultraviolet (UV) lasing, paving the way for advanced UV applications.
Area of Science:
- Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Surface-emitting (SE) semiconductor lasers are crucial for communication and sensing.
- Expanding SE laser operation to the ultraviolet (UV) range enables applications in disinfection, medical diagnostics, and phototherapy.
- Current UV SE lasers, particularly those based on aluminum gallium nitride (AlGaN), face challenges with random cavities, optical pumping, and high threshold power densities.
Purpose of the Study:
- To report ultralow threshold, surface-emitting (SE) lasing in the UV spectral range.
- To demonstrate the potential of GaN-based epitaxial nanowire photonic crystals for UV laser development.
- To overcome the limitations of existing UV SE lasers, such as high threshold power densities.
Main Methods:
- Fabrication of GaN-based epitaxial nanowire photonic crystals.
- Characterization of surface-emitting (SE) lasing properties.
- Measurement of lasing wavelength and threshold power density.
Main Results:
- Achieved surface-emitting (SE) lasing at 367 nm.
- Measured an ultralow threshold power density of approximately 7 kW/cm² (49 μJ/cm²).
- Demonstrated a 100-fold reduction in threshold power density compared to conventional AlGaN UV VCSELs.
Conclusions:
- This work presents the first achievement of nanowire photonic crystal SE lasers in the UV range.
- The developed GaN-based nanowire photonic crystals offer a viable path for creating efficient UV SE lasers.
- The established electrical doping in III-nitride nanowires supports the development of practical semiconductor UV SE lasers.
