Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Incidental Cardiac Fibroma in a Young Soldier: Exercise Authorization and Graded Fitness-for-Duty Determination.

Military medicine·2026
Same author

Beyond Disease Management: The Fitness-for-Duty Arbitration Function of an Embedded Military Cardiology Service.

Military medicine·2026
Same author

Chiroptical properties of bright chiral sulfur quantum dots with high-yield blue luminescence.

Chemical communications (Cambridge, England)·2026
Same author

Reflectivity of sputter-deposited gold coatings depending on the layer structure.

Applied optics·2026
Same author

Shoulder electrostimulation mimicking ventricular tachycardia: an unnecessary defibrillator upgrade averted by electrogram review.

Acta cardiologica·2026
Same author

Implementation of a Patent Foramen Ovale Closure Program in a Role 4 Military Hospital: Initial Experience and Proof-of-Concept for Enhancing Cryptogenic Stroke Care and Military Diving Operational Readiness.

Military medicine·2026

Related Experiment Video

Updated: Aug 1, 2025

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

10.3K

Atomically Thin Metal-Dielectric Heterostructures by Atomic Layer Deposition.

Pallabi Paul1,2, Paul Schmitt1,2, Vilborg Vala Sigurjónsdóttir1,2

  • 1Institute of Applied Physics and Abbe Center of Photonics, Friedrich Schiller University Jena, Albert-Einstein-Straße 15, 07745 Jena, Germany.

ACS Applied Materials & Interfaces
|April 25, 2023
PubMed
Summary

Atomically thin iridium/aluminum oxide heterostructures enable novel optoelectronic devices. Precise control over composition allows tuning dielectric properties, leading to epsilon-near-zero metamaterials for advanced optical applications.

Keywords:
atomic layer depositioninterfacesiridium/aluminum oxidemetal−dielectric heterostructuresstructural and optical propertiesultrathin metallic layers

More Related Videos

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.6K
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:56

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

92

Related Experiment Videos

Last Updated: Aug 1, 2025

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
11:54

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

10.3K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.6K
Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
04:56

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

92

Area of Science:

  • Materials Science
  • Nanotechnology
  • Optoelectronics

Background:

  • Heterostructures are crucial for optoelectronic and photonic applications.
  • Atomically thin interfaces are key for advanced device performance.

Purpose of the Study:

  • To report on atomically thin iridium/aluminum oxide (Ir/Al2O3) heterostructures.
  • To investigate their structural and optical properties for micro-optoelectronic technologies.

Main Methods:

  • X-ray reflectivity (XRR)
  • X-ray photoelectron spectroscopy (XPS)
  • High-resolution transmission electron microscopy (HRTEM)
  • Spectroscopic ellipsometry
  • UV/vis/NIR spectrophotometry

Main Results:

  • Layer-by-layer growth of Ir on Al2O3 observed, differing from typical island growth.
  • Formation of Ir-O-Al bonds at interfaces for low Ir concentrations.
  • Tunable transition from dielectric to metallic behavior with Ir thickness (2-4 nm).
  • Demonstration of epsilon-near-zero (ENZ) metamaterials with tunable dielectric constants.

Conclusions:

  • Comprehensive study of Ir/Al2O3 heterostructure interfaces.
  • Provides a new material platform for novel optical functionalities.
  • Highlights the potential for advanced micro-optoelectronic devices.