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Optically Induced Spin Electromotive Force in a Ferromagnetic-Semiconductor Quantum Well Structure
Igor V Rozhansky1, Ina V Kalitukha1, Grigorii S Dimitriev1
1Ioffe Institute, St. Petersburg 194021, Russia.
Abstract:
Hybrid structures combining ferromagnetic (FM) and semiconductor constituents have great potential for future applications in the field of spintronics. A systematic approach to study spin-dependent transport in a GaMnAs/GaAs/InGaAs quantum well (QW) hybrid structure with a few-nanometer-thick GaAs barrier is developed. It is demonstrated that a combination of spin electromotive force measurements and photoluminescence detection provides a powerful tool for studying the properties of such hybrid structures and allows the resolution of the dynamic FM proximity effect on a nanometer scale. The method can be generalized to various systems, including rapidly developing 2D van der Waals materials.
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