Thermal Stability of Mg2Si0.6Sn0.4 under Oxidation Conditions
Mostafa Oulfarsi1, Nicolas David1, Lionel Aranda1
1Université de Lorraine, UMR CNRS 7198, Institut Jean Lamour, Nancy 54011, France.
Magnesium silicide-tin (Mg₂Si₀.₆Sn₀.₄) shows excellent oxidation resistance at 400°C, making it reliable for mid-temperature thermoelectric modules. However, it degrades above 500°C due to tin presence and oxide formation.
Area of Science:
- Materials Science
- Solid State Chemistry
- Thermoelectrics
Background:
- Mid-temperature thermoelectric modules require materials with high oxidation resistance.
- Magnesium silicide-tin (Mg₂Si₀.₆Sn₀.₄) is a promising candidate for such applications.
Purpose of the Study:
- To evaluate the oxidation stability of Mg₂Si₀.₆Sn₀.₄ at mid-temperatures (400-600 °C) in air.
- To elucidate the degradation mechanism at higher temperatures.
Main Methods:
- Oxidation experiments under static and cyclic conditions at 400 °C.
- Thermogravimetry (TGA).
- Scanning electron microscopy (SEM).
- Temperature X-ray diffraction (T-XRD).
- Mechanical and thermodynamic analysis.
Main Results:
- Mg₂Si₀.₆Sn₀.₄ demonstrated excellent stability at 400 °C, enduring 100 hours of static exposure and 400 heating-cooling cycles.
- Material decomposition was observed above 500 °C in air.
- Degradation is attributed to the presence of tin and the formation of various oxides.
Conclusions:
- Mg₂Si₀.₆Sn₀.₄ is a stable and reliable thermoelectric material for mid-temperature applications up to 400 °C.
- Its use above 500 °C in air is limited due to oxidative decomposition mechanisms involving tin and oxide formation.
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