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Updated: Jun 15, 2026

Aerosol-assisted Chemical Vapor Deposition of Metal Oxide Structures: Zinc Oxide Rods
Published on: September 14, 2017
Direct-Patterning ZnO Deposition by Atomic-Layer Additive Manufacturing Using a Safe and Economical Precursor
Sonja Stefanovic1, Negar Gheshlaghi1, David Zanders2
1Friedrich-Alexander-Universität Erlangen-Nürnberg, Chemistry of Thin Film Materials, IZNF, Cauerstraße 3, 91058, Erlangen, Germany.
Atomic-layer additive manufacturing (ALAM) offers direct patterning for nanofabrication, overcoming limitations of area-selective atomic layer deposition (AS-ALD). This new method utilizes a novel precursor for high-quality zinc oxide deposition.
Area of Science:
- Materials Science
- Nanotechnology
- Chemical Engineering
Background:
- Area-selective atomic layer deposition (AS-ALD) is a nanofabrication technique with advantages over lithography but requires pre-patterned substrates and faces selectivity limitations.
- Existing AS-ALD methods are constrained by substrate choice and insufficient selectivity, hindering broader application.
Purpose of the Study:
- To introduce and evaluate atomic-layer additive manufacturing (ALAM) as a novel direct patterning method for nanofabrication.
- To explore the use of bis(dimethylaminopropyl)zinc, Zn(DMP)2, as a precursor in ALAM for zinc oxide (ZnO) deposition.
- To demonstrate the feasibility of ALAM for creating functional electronic devices.
Main Methods:
- Developed an ALAM process by adapting 3D-printing principles for atomic-layer manufacturing using a precursor supply nozzle.
- Replaced traditional diethylzinc with the less volatile Zn(DMP)2 precursor for reduced vapor consumption in ALAM.
- Investigated ZnO deposition characteristics, including growth rates and stoichiometry, across a temperature range of 200-250 °C using spectroscopic ellipsometry and X-ray spectroscopy.
Main Results:
- ALAM demonstrated effective direct patterning of ZnO with growth rates of 1.1 Å per pass, comparable to ALD's 0.9 Å per cycle.
- Stoichiometric and crystalline ZnO films were achieved within an intermediate temperature window of 200-250 °C.
- A functional thin-film transistor was successfully fabricated using an ALAM-deposited ZnO line, validating the process's utility.
Conclusions:
- ALAM circumvents AS-ALD's limitations by enabling direct patterning without pre-patterned substrates, offering enhanced selectivity and substrate flexibility.
- The novel ZnO ALAM process using Zn(DMP)2 yields high-quality, stoichiometric, crystalline material suitable for device fabrication.
- ALAM represents a promising advancement in additive manufacturing for nanoscale applications, particularly in creating functional thin-film devices.
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