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Updated: Jul 31, 2025
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
Protocol for fabrication and characterization of two-dimensional lead halide perovskite thin-film transistors
Xincan Qiu1, Yu Liu2, Jiangnan Xia2
1Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China; Shenzhen Research Institute of Hunan University, Shenzhen 518063, China; International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China.
Abstract:
Two-dimensional (2D) lead halide perovskites (LHPs) are highly attractive for fabricating thin-film transistors (TFTs), but it remains a challenge for 2D LHP TFTs to work at room temperature (RT). Here, we present a protocol for fabricating 2D LHP TFTs that operate well at RT and exhibit high bias-stress stability and storage stability. We describe steps for preparing materials and equipment followed by fabrication of devices. We then detail measurement of device output characteristics and extraction of performance parameters. For complete details on the use and execution of this protocol, please refer to Qiu et al. (2023).1.
