Strain induced metal-semiconductor transition in two-dimensional topological half metals

Area of Science:

• Condensed Matter Physics
• Materials Science
• Spintronics

Background:

• Two-dimensional (2D) magnetic materials are crucial for next-generation spintronic devices.
• Developing stable 2D magnetic semiconductors with tunable properties remains a significant challenge.

Purpose of the Study:

• To propose and investigate a new family of stable 2D magnetic materials.
• To explore the potential of these materials for spintronic applications by inducing phase transitions.

Main Methods:

• Density Functional Theory (DFT) calculations were employed to predict material stability and electronic properties.
• Investigated the effects of biaxial and uniaxial tensile strain on the electronic structure and magnetic properties.
• Analyzed magnetic phase transitions and Curie temperatures under strain.

Main Results:

• A new family of stable 2D materials, $$ $$ (X = Cl, Br, I), was identified.
• The monolayer $$ $$ exhibits an intrinsic ferromagnetic ground state and acts as a 2D Weyl half semimetal.
• Tensile strain induces a metal-semiconductor phase transition, increasing the Curie temperature to 159 K.

Conclusions:

• The identified $$ $$ materials are promising candidates for spintronic applications.
• Strain-induced metal-semiconductor transitions offer a viable pathway to engineer 2D magnetic semiconductors.
• This work provides a novel strategy for designing advanced 2D magnetic materials.