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Related Concept Videos

P-N junction01:11

P-N junction

590
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
590
Biasing of P-N Junction01:16

Biasing of P-N Junction

632
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
632
Phase Diagram01:19

Phase Diagram

6.0K
The phase of a given substance depends on the pressure and temperature. Thus, plots of pressure versus temperature showing the phase in each region provide considerable insights into the thermal properties of substances. Such plots are known as phase diagrams. For instance, in the phase diagram for water (Figure 1), the solid curve boundaries between the phases indicate phase transitions (i.e., temperatures and pressures at which the phases coexist).
6.0K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

397
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
397
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

289
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
289
Phase Diagrams02:39

Phase Diagrams

42.0K
A phase diagram combines plots of pressure versus temperature for the liquid-gas, solid-liquid, and solid-gas phase-transition equilibria of a substance. These diagrams indicate the physical states that exist under specific conditions of pressure and temperature and also provide the pressure dependence of the phase-transition temperatures (melting points, sublimation points, boiling points). Regions or areas labeled solid, liquid, and gas represent single phases, while lines or curves represent...
42.0K

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Current-Phase Relation of a WTe2 Josephson Junction.

Martin Endres1, Artem Kononov1, Hasitha Suriya Arachchige2

  • 1Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland.

Nano Letters
|May 8, 2023
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Summary

Researchers measured a 4π-periodic switching current in a Josephson junction using the topological insulator WTe2. Subtle inductance effects, not just asymmetry, complicated measurements of the current-phase relation.

Keywords:
WTe2asymmetric SQUIDcurrent−phase relationedge stateshigher-order topological insulatorstopological superconductivity

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Phenomena

Background:

  • Topological insulators exhibit unique electronic properties with potential applications in quantum devices.
  • Josephson junctions incorporating topological insulators are predicted to show exotic phenomena like the fractional Josephson effect.
  • The fractional Josephson effect is characterized by a 4π-periodic current-phase relation.

Purpose of the Study:

  • To experimentally investigate the 4π-periodic current-phase relation in a Josephson junction formed by a higher-order topological insulator, WTe2.
  • To identify factors influencing the accurate measurement of the current-phase relation in such systems.
  • To develop a method for recovering the true current-phase relation despite experimental complexities.

Main Methods:

  • Fabrication of an asymmetric Superconducting Quantum Interference Device (SQUID) utilizing WTe2 as the topological insulator.
  • Measurement of the switching current across the Josephson junction.
  • Numerical analysis to account for parasitic inductance effects, specifically from self-formed PdTe2.
  • Characterization of the junction in the short ballistic limit.

Main Results:

  • A 4π-periodic switching current was observed, suggesting the fractional Josephson effect.
  • Measurement accuracy was significantly impacted by parasitic inductances from self-formed PdTe2, not just junction asymmetry.
  • A numerical method successfully recovered the current-phase relation.
  • The 1.5 μm long junction was best described by the short ballistic limit model.

Conclusions:

  • High asymmetry and low loop inductance are insufficient for reliable current-phase relation measurements in topological insulator Josephson junctions.
  • Parasitic inductance effects can mask or mimic topological signatures, necessitating careful analysis.
  • Accurate characterization of Josephson junctions requires accounting for all inductive contributions, including those from material interfaces.