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Related Concept Videos

Semiconductors01:22

Semiconductors

754
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
754
Types of Semiconductors01:20

Types of Semiconductors

685
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
685

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Related Experiment Video

Updated: Jul 31, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Waveguide-integrated silicon T centres.

A DeAbreu, C Bowness, A Alizadeh

    Optics Express
    |May 9, 2023
    PubMed
    Summary
    This summary is machine-generated.

    Silicon T centres are promising for quantum networks, offering direct telecom-band emission and long-lived qubits. Integrated into photonic chips, their narrow linewidths pave the way for scalable quantum technologies.

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    Area of Science:

    • Quantum Information Science
    • Solid-State Physics
    • Nanophotonics

    Background:

    • High-performance quantum light-matter interconnects are crucial for modular, networked quantum technologies.
    • Solid-state colour centres, especially T centres in silicon, present significant technological advantages for quantum networking.
    • T centres in silicon offer telecommunications-band emission, long-lived spin qubits, and CMOS-compatible integration.

    Purpose of the Study:

    • To characterize T centre spin ensembles integrated into single-mode waveguides on silicon-on-insulator (SOI) photonic chips.
    • To assess the optical properties and spin coherence of these integrated T centres.
    • To evaluate the potential of T centres for scalable, high-performance distributed quantum technologies.

    Main Methods:

    • Fabrication and characterization of T centre spin ensembles within single-mode waveguides on SOI.
    • Measurement of spin relaxation times (T1) and optical properties, including homogeneous linewidths.
    • Analysis of linewidths in integrated waveguides and comparison with bulk crystals for future protocol predictions.

    Main Results:

    • Demonstrated long spin T1 times for T centre spin ensembles in SOI waveguides.
    • Measured narrow homogeneous linewidths for waveguide-integrated T centre emitters, suitable for remote entanglement.
    • Achieved linewidths over an order of magnitude lower than previously reported, indicating significant progress.

    Conclusions:

    • T centres in silicon are highly promising for scalable quantum networking and distributed quantum computing.
    • The demonstrated integration and optical properties suggest near-term feasibility of high-performance quantum technologies.
    • Further linewidth reduction in isotopically pure crystals may enhance performance for future quantum protocols.