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Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

631
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
631
P-N junction01:11

P-N junction

590
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
590

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Related Experiment Video

Updated: Jul 31, 2025

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
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Red InGaN nanowire LED with bulk active region directly grown on p-Si (111).

Xingchen Pan, Jiaxun Song, Hao Hong

    Optics Express
    |May 9, 2023
    PubMed
    Summary

    Researchers developed a red nanowire LED on silicon, showing stable color and efficiency at high currents. This breakthrough enables efficient light-emitting diodes (LEDs) integrated with silicon electronics.

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    Analysis of Contact Interfaces for Single GaN Nanowire Devices
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    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Indium Gallium Nitride (InGaN) based light-emitting diodes (LEDs) are crucial for optoelectronic applications.
    • Directly growing III-nitride materials on silicon substrates presents significant challenges but offers potential for cost-effective integration.
    • Nanowire structures can mitigate strain and defects associated with heteroepitaxial growth.

    Purpose of the Study:

    • To demonstrate a red nanowire LED utilizing an Indium Gallium Nitride (InGaN) active region.
    • To investigate the performance characteristics of LEDs grown directly on a p-type Silicon (p-Si) (111) substrate.
    • To evaluate the potential for device integration with silicon-based electronics.

    Main Methods:

    • Fabrication of red nanowire LEDs with an InGaN bulk active region.
    • Direct epitaxial growth of the nanowire structure on a p-Si (111) substrate.
    • Characterization of optical and electrical properties, including wavelength stability, linewidth, efficiency droop, output power, and external quantum efficiency (EQE) as a function of injection current.

    Main Results:

    • Successful demonstration of a red nanowire LED grown on a p-Si (111) substrate.
    • Observed good wavelength stability and linewidth narrowing without the quantum confined Stark effect (QCSE).
    • Efficiency droop occurred at high injection currents, with an output power of 0.55 mW and EQE of 1.4% at 20 mA (640 nm), reaching 2.3% EQE at 70 mA (625 nm).
    • A naturally formed tunnel junction at the n-GaN/p-Si interface facilitated large carrier injection currents.

    Conclusions:

    • The developed red nanowire LED on a p-Si substrate shows promising performance characteristics.
    • The integration of InGaN LEDs on silicon is feasible and beneficial for large-scale device integration.
    • The naturally formed tunnel junction enhances carrier injection, making this approach suitable for advanced optoelectronic devices.