Synergy of S-vacancy and heterostructure in BiOCl/Bi₂S_3-x boosting room-temperature NO₂ sensing

The special physicochemical properties of Bi₂S₃ nanomaterial endow it to be exceptional NO₂ sensing properties. However, sensors based on pure Bi₂S₃ cannot detect trace NO₂ at room temperature effectively due to the scanty active sites and poor charge transfer efficiency. Herein, vacancy defect and heterostructure engineering are rationally integrated to explore BiOCl/Bi₂S_3-x heterostructure with rich S vacancies to enhance NO₂ sensing performance. The optimized sensor based on S-vacancy-rich BiOCl/Bi₂S_3-x heterostructure exhibited a high response value (R_g/R_a = 29.1) to 1 ppm NO₂ at room temperature, which was about 17 times compared to the pristine Bi₂S₃. Meanwhile, the BiOCl/Bi₂S_3-x sensor also exhibited a short response time (36 s) towards 1 ppm NO₂ and a low theoretical detection limit (2 ppb). The superior response value of S-vacancy-rich BiOCl/Bi₂S_3-x heterostructures was ascribed to the improved electron migration at the heterointerface and the additional exposed active sites caused by the S vacancies in Bi₂S_3-x. Additionally, the sensors based on S-vacancy-rich BiOCl/Bi₂S_3-x heterostructures showed good long-term stability, outstanding selectivity, and good flexibility. This study offers an effective method for synergistically engineering defect and heterostructure to enhance gas sensing properties at room temperature.