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Updated: Jul 30, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Ising superconductivity induced from spin-selective valley symmetry breaking in twisted trilayer graphene
1Instituto de Estructura de la Materia, CSIC, E-28006, Madrid, Spain. j.gonzalez@csic.es.
Abstract:
We show that the e-e interaction induces a strong breakdown of valley symmetry for each spin channel in twisted trilayer graphene, leading to a ground state where the two spin projections have opposite sign of the valley symmetry breaking order parameter. This leads to a spin-valley locking in which the electrons of a Cooper pair are forced to live on different Fermi lines attached to opposite valleys. Furthermore, we find an effective intrinsic spin-orbit coupling explaining the protection of the superconductivity against in-plane magnetic fields. The effect of spin-selective valley symmetry breaking is validated as it reproduces the experimental observation of the reset of the Hall density at 2-hole doping. It also implies a breakdown of the symmetry of the bands from C6 to C3, with an enhancement of the anisotropy of the Fermi lines which is at the origin of a Kohn-Luttinger (pairing) instability. The isotropy of the bands is gradually recovered, however, when the Fermi level approaches the bottom of the second valence band, explaining why the superconductivity fades away in the doping range beyond 3 holes per moiré unit cell in twisted trilayer graphene.
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