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Millisecond flash lamp curing for porosity generation in thin films.
Ahmed G Attallah1,2, Slawomir Prucnal3, Maik Buttering4
1Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany. a.elsherif@hzdr.de.
Scientific Reports
|May 12, 2023
Summary
Flash lamp annealing (FLA) effectively cures dielectric thin films by degrading pore precursors. This novel method controls nanoscale porosity and enhances film properties for advanced applications.
Area of Science:
- Materials Science
- Thin Film Technology
- Nanotechnology
Background:
- Dielectric thin films often contain nanoscale pores, impacting their performance.
- Pore precursors require effective degradation for improved film properties.
Purpose of the Study:
- To investigate Flash Lamp Annealing (FLA) as a novel curing method for dielectric thin films.
- To quantify nm-scale porosity and analyze post-treatment chemistry.
Main Methods:
- Flash Lamp Annealing (FLA) with millisecond pulse durations.
- Positron Annihilation Spectroscopy (PAS) for porosity analysis.
- Fourier-Transform Infrared (FTIR) spectroscopy for chemical analysis.
Main Results:
- FLA initiates pore void formation at 6 ms.
- Optimized FLA parameters control pore network structure (interconnected or isolated).
- FTIR confirms matrix densification and hydrophobic structure formation.
Conclusions:
- FLA is a controllable method for degrading porogens and managing porosity in thin films.
- Optimal FLA conditions yield well-densified, hydrophobic porous structures.
- A graphene oxide-like layer forms, potentially sealing the pore network.
