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Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN

Tomasz Sochacki1, Robert Kucharski1, Karolina Grabianska1

  • 1Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.

Materials (Basel, Switzerland)
|May 13, 2023
PubMed

Keywords:
GaNbasic ammonothermal methodcrystal growthgrowth modelgrowth morphologyhalide vapor phase epitaxy

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