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Efficient and air-stable n-type doping in organic semiconductors
Dafei Yuan1,2, Wuyue Liu1, Xiaozhang Zhu1,3
1Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China. xzzhu@iccas.ac.cn.
Chemical Society Reviews
|May 15, 2023
Summary
Efficient and air-stable n-type doping in organic semiconductors (OSCs) is crucial for advanced electronics. This review addresses doping efficiency and stability challenges, offering strategies for improved electron transport and device performance.
Area of Science:
- Materials Science
- Organic Electronics
- Semiconductor Physics
Background:
- Chemical doping is vital for tuning organic semiconductor (OSC) properties.
- N-type doping in OSCs lags behind p-type doping, hindering electron transport and device performance.
- Achieving efficient and air-stable n-type doping is a current research focus.
Purpose of the Study:
- To review the factors influencing chemical doping efficiency in n-type OSCs.
- To explain the origins of instability in n-type doped OSC films under ambient conditions.
- To discuss strategies for enhancing air stability and applications of n-type doped OSCs.
Main Methods:
- Analysis of doping microstructure, charge transfer, and dissociation efficiency.
- Exploration of molecular design and post-treatment effects on doping efficiency.
- Review of design strategies including LUMO level tuning, charge delocalization, and in situ doping.
Main Results:
- Doping efficiency is determined by microstructure, charge transfer, and dissociation.
- Molecular design and post-treatments offer precise control over doping efficiency.
- Strategies like LUMO tuning and in situ doping enhance air stability.
Conclusions:
- Efficient and air-stable n-type doping is achievable through careful molecular design and strategic approaches.
- Enhanced n-type doping in OSCs promises significant improvements in electronic devices.
- Future research directions include novel doping methods and material systems for stable, efficient n-type OSCs.
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