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Related Experiment Video

Updated: Jul 29, 2025

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

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Published on: December 3, 2013

Band splitting and enhanced charge density wave modulation in Mn-implanted CsV₃Sb₅.

Xiaoxu Lei^1,2, Pengdong Wang², Mengjuan Mi³

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China Hefei 230026 China.

Nanoscale Advances

|May 19, 2023

Summary

Manganese doping in Kagome metal CsV3Sb5 enhances charge density waves (CDW) and topological states. Ion implantation creates Mn-doped crystals, revealing band splitting and a higher CDW transition temperature.

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Last Updated: Jul 29, 2025

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

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Published on: December 3, 2013

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Area of Science:

Condensed Matter Physics
Materials Science
Quantum Materials

Background:

Kagome metal CsV3Sb5 exhibits intriguing charge density wave (CDW), topological surface states, and superconductivity.
The interaction between magnetic doping and the exotic quantum states in CsV3Sb5 remains underexplored.

Purpose of the Study:

To investigate the effects of magnetic doping on the electronic properties and CDW behavior of CsV3Sb5.
To explore a novel method for achieving deep doping in bulk materials.

Main Methods:

Single crystal growth of Mn-doped CsV3Sb5 via ion implantation.
Angle-resolved photoemission spectroscopy (ARPES) to probe electronic band structure and CDW modulation.
Analysis of spectral weight transfer and magnetic ordering.

Main Results:

Ion implantation successfully introduced Mn doping into CsV3Sb5 single crystals.
Observed anisotropic band splitting across the entire Brillouin region.
Enhanced CDW modulation indicated by a higher Dirac cone gap closing temperature (135 K ± 5 K) compared to the bulk value (~94 K).
Evidence of spectral weight transfer to the Fermi level and weak antiferromagnetic order at low temperatures.

Conclusions:

Manganese doping significantly enhances the charge density wave (CDW) in CsV3Sb5.
The enhanced CDW is attributed to polariton excitation and Kondo shielding effects.
Ion implantation provides an effective route for deep doping in bulk materials, creating a platform for studying quantum state couplings.