A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel...

Area of Science:

• Semiconductor device physics
• Advanced transistor architectures

Background:

• Existing High Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel Field Effect Transistors (HSB-BTFETs) have limitations in forward current driving ability.
• The need for more sensitive and efficient transistors in modern electronics is growing.

Purpose of the Study:

• To propose and analyze a novel transistor structure, the vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel Field Effect Transistor (VPISDC-HSB-BTFET).
• To demonstrate enhanced sensitivity and ON-state current driving capability compared to previous HSB-BTFET designs and mainstream FinFET technology.

Main Methods:

• Designing a U-shaped silicon body for the transistor.
• Implementing vertically plug-in source and drain contacts into the U-shaped structure.
• Analyzing the increased efficient area for band-to-band tunneling generation.

Main Results:

• The VPISDC-HSB-BTFET exhibits significantly improved forward current driving ability.
• The novel structure enhances the band-to-band tunneling generation region near the source-drain contacts.
• Achieved lower subthreshold swing, reduced static power consumption, and a higher Ion-Ioff ratio compared to FinFETs.

Conclusions:

• The proposed VPISDC-HSB-BTFET offers a highly sensitive and efficient alternative for advanced electronic applications.
• The design innovations lead to superior performance metrics, including better power efficiency and switching characteristics.