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Updated: Jul 29, 2025
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Crystal growth and electronic properties of LaSbSe
Krishna Pandey1, Lauren Sayler2, Rabindra Basnet3
1Materials Science and Engineering Program, Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA.
Abstract:
The ZrSiS-type materials have gained intensive attentions. The magnetic version of the ZrSiS-type materials, LnSbTe (Ln = Lanthanide), offers great opportunities to explore new quantum states owing to the interplay between magnetism and electronic band topology. Here, we report the growth and characterization of the non-magnetic LaSbSe of this material family. We found the metallic transport, low magnetoresistance and non-compensated charge carriers with relatively low carrier density in LaSbSe. The specific heat measurement has revealed distinct Sommerfeld coefficient and Debye temperature in comparison to LaSbTe. Such addition of a new LnSbSe selenide compound could provide the alternative material choices in addition to LnSbTe telluride materials.
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