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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
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Exchange-Biased Quantum Anomalous Hall Effect.

Peng Zhang1, Purnima P Balakrishnan2, Christopher Eckberg1,3,4,5

  • 1Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, CA, 90095, USA.

Advanced Materials (Deerfield Beach, Fla.)
|May 19, 2023
PubMed
Summary
This summary is machine-generated.

Researchers achieved the quantum anomalous Hall (QAH) effect in Cr-doped (Bi,Sb)2Te3 on Al-Cr2O3. This exchange-biased QAH state can be controlled, paving the way for dissipationless spintronics.

Keywords:
antiferromagnetexchange biasquantum anomalous Halltopological insulators

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Physics

Background:

  • The quantum anomalous Hall (QAH) effect exhibits dissipationless chiral edge states and quantized Hall resistance without an external magnetic field.
  • Controlling the QAH state is crucial for advancing topological quantum physics and developing dissipationless electronic devices.

Purpose of the Study:

  • To realize and manipulate the QAH effect in a novel material system.
  • To investigate the role of interfacial exchange coupling in controlling QAH properties.

Main Methods:

  • Fabrication of Cr-doped (Bi,Sb)2Te3 (CBST) on Al-doped Cr2O3.
  • Utilized polarized neutron reflectometry (PNR) to probe interfacial magnetic coupling.
  • Employed a field training process to manipulate exchange bias.

Main Results:

  • Successfully realized the QAH effect in the CBST/Al-Cr2O3 heterostructure.
  • Observed strong exchange coupling between CBST and Al-Cr2O3, leading to an exchange-biased QAH effect.
  • Demonstrated effective control over the exchange bias magnitude and sign via field training.

Conclusions:

  • The interfacial exchange coupling provides a mechanism to manipulate the QAH state.
  • This work opens new avenues for spintronics applications utilizing the exchange bias effect in QAH systems.