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Laser Direct Writing of Sol-Gel-Derived Vacancy-Rich Functional Oxide Semiconductors
Jing Long1, Xi Chen2, Tianli Mao2
1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
ACS Nano
|May 22, 2023
Summary
A novel femtosecond laser method enables room-temperature fabrication of micro/nanostructured semiconductor metal oxides with oxygen vacancies. This technique allows for high-resolution patterning on diverse substrates, advancing miniaturized functional devices.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Fabricating oxide semiconductors with oxygen vacancies (OVs) is vital for miniaturized devices.
- Conventional methods require high-temperature annealing under anaerobic conditions, limiting applications.
Purpose of the Study:
- To develop a room-temperature, atmospheric additive manufacturing method for creating micro/nanostructured semiconductor metal oxides (SMOs) with abundant OVs.
- To demonstrate the fabrication of functional devices with high resolution using this novel technique.
Main Methods:
- Utilized multiphoton-induced femtosecond laser additive manufacturing.
- Directly patterned micropatterns with high resolution (∼1 μm) in an atmospheric environment at room temperature.
- Applied the method to both flexible and rigid substrates.
Main Results:
- Achieved direct writing of SMO micropatterns with abundant OVs at room temperature.
- Fabricated interdigitated functional devices exhibiting photosensitivity and gas sensitivity.
- Demonstrated applicability on flexible and rigid substrates.
Conclusions:
- The femtosecond laser additive manufacturing method offers high-precision fabrication of SMOs with OVs.
- This technique enables heterogeneous integration of oxide semiconductors, particularly on flexible substrates.
- Paves the way for advanced applications in soft and wearable electronics/optoelectronics.
