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Updated: Jul 29, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Excitonic solar cells based on van der Waals heterojunctions of Janus III-VI chalcogenide monolayers
Jinghua Pan1, Yu Wang1, Danni Wang1
1School of Science, Jiangnan University, Wuxi 214122, People's Republic of China.
Abstract:
We construct the two-dimensional (2D) excitonic solar cells based on type II vdW heterojunctions of Janus III-VI chalcogenide monolayers and investigate the performance of the device using the first principle. The calculated solar energy absorbance of In2SSe/GaInSe2and In2SeTe/GaInSe2heterojunctions is the order of 105cm-1. The predicted photoelectric conversion efficiency of the In2SeTe/GaInSe2heterojunction can reach up to 24.5%, which compares favorably with other previously studied 2D heterojunctions. The excellent performance of In2SeTe/GaInSe2heterojunction originates from the fact that the built-in electric field at the interface of In2SeTe/GaInSe2promote the flow of the photogenerated electrons. The results suggest that 2D Janus Group-III chalcogenide heterojunction can be a good candidate for new optoelectronic nanodevices.
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