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Updated: Jul 29, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Pressure and strain engineering of the structural and electronic transitions in ReS2
Liang Ma1, Dan Liu1, Binbin Xiao1
1College of Physics and Electronic Engineering, Hengyang Normal University, Hengyang 421008, People's Republic of China.
Abstract:
The distinctive crystal structure and anisotropic electrical characteristics of rhenium disulfide (ReS2) have garnered growing interest. Pressure and strain engineering has been used to modulate structural and electronic transition. Here, we present a comprehensive study on the high-pressure phase transition and strain tunable electronic properties of ReS2. There occurs a structural transition from distorted-1T to distorted-1T' at 7.5 GPa. In addition, ReS2has opposite piezoresistive effects along the two principle axes in the plane. This study shows that pressure and strain may be used to tune the characteristics of ReS2for future optoelectronic applications.
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