Related Experiment Video
Updated: Jul 29, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Experimental evidence of a size-dependent sign change of the Seebeck coefficient of Bi nanowire arrays
Michael Florian Peter Wagner1, Anna Sarina Paulus2,3, Wilfried Sigle4
1Materials Research Department, GSI Helmholtzzentrum für Schwerionenforschung, 64291, Darmstadt, Germany. f.m.wagner@gsi.de.
Abstract:
The electrical transport in bismuth nanowires is strongly influenced by both sample geometry and crystallinity. Compared to bulk bismuth, the electrical transport in nanowires is dominated by size effects and influenced by surface states, which gain increasing relevance with increasing surface-to-volume ratios, i.e. with decreasing wire diameter. Bismuth nanowires with tailored diameter and crystallinity constitute, therefore, excellent model systems, allowing to study the interplay of the different transport phenomena. Here, we present temperature-dependent Seebeck coefficient and relative electrical resistance measurements of parallel bismuth nanowire arrays with diameters between 40 and 400 nm synthesized by pulsed electroplating in polymer templates. Both electrical resistance and Seebeck coefficient exhibit a non-monotonic temperature dependence, with the sign of the Seebeck coefficient changing from negative to positive with decreasing temperature. The observed behavior is size-dependent and is attributed to limitations of the mean free path of the charge carriers within the nanowires. The observed size-dependent Seebeck coefficient and in particular the size-dependent sign change opens a promising avenue for single-material thermocouples with p- and n-legs made from nanowires with different diameters.
Related Concept Videos
Biot-Savart Law: Problem-Solving
Consider a mobile phone battery bank as a source of steady current, which flows through the wire connected between the two. What is the magnitude of the magnetic field created by this current at a field point P?
To estimate the magnitude of the total magnetic field, we first consider a small current element of length dl, at a distance r from the field point. Now the following...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Magnetic Field Due To A Thin Straight Wire
Biot-Savart Law
A current-carrying wire creates a magnetic field in its vicinity. Consider an infinitesimal current element dl in a wire. The direction of vector dl is along the direction of the current. The total magnetic...
Sign Convention
The normal force acts perpendicular to the beam's cross-section and can...
Small-Signal Analysis of BJT Amplifiers

